74lvx04 low voltage cmos hex inverter november 1998 n high speed: t pd = 4.1 ns (typ.) at v cc = 3.3v n input voltage level: v il = 0.8v, v ih = 2v at v cc = 3v n low power dissipation: i cc = 2 m a (max.) at t a = 25 o c n low noise: v olp = 0.3 v (typ.) at v cc = 3.3v n symmetrical output impedance: |i oh | = i ol = 4 ma (min) n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 2v to 3.6v (1.2v data retention) n pin and function compatible with 74 series 04 n improved latch-up immunity description the 74lvx04 is a low voltage cmos hex inverter fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos technology. it is ideal for low power and low noise 3.3v applications. the internal circuit is composed of 3 stages including buffer output, which enable high noise immunity and stable output. it has better speed performance at 3.3v than 5v ls-ttl family combined with the true cmos low power consumption. all inputs and outputs are equipped with protection circuits against static discharge, giving them 2kv esd immunity and transient excess voltage. pin connection and iec logic symbols order codes : 74lvx04m 74lvx04t m (micro package) t (tssop package) ? 1/8
input equivalent circuit truth table ay lh hl pin description pin no symbol name and function 1, 3, 5, 9, 11, 13 1a to 6a data inputs 2, 4, 6, 8, 10, 12 1y to 6y data outputs 7 gnd ground (0v) 14 v cc positive supply voltage recommended operating conditions symbol parameter value unit v cc supply voltage (note 1) 2 to 3.6 v v i input voltage 0 to 5.5 v v o output voltage 0 to v cc v t op operating temperature: -40 to +85 o c dt/dv input rise and fall time (v cc = 3v) (note 2) 0 to 100 ns/v 1) truth table guaranteed: 1.2v to 3.6v 2) v in from 0.8v to 2v absolute maximum ratings symbol parameter value unit v cc supply voltage -0.5 to +7.0 v v i dc input voltage -0.5 to 7.0 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current - 20 ma i ok dc output diode current 20 ma i o dc output current 25 ma i cc or i gnd dc v cc or ground current 50 ma t stg storage temperature -65 to +150 o c t l lead temperature (10 sec) 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditi on is not implied. 74lvx04 2/8
dc specifications symbol parameter test conditions value unit v cc (v) t a = 25 o c -40 to 85 o c min. typ. max. min. max. v ih high level input voltage 2.0 1.5 1.5 v 3.0 2.0 2.0 3.6 2.4 2.4 v il low level input voltage 2.0 0.5 0.5 v 3.0 0.8 0.8 3.6 0.8 0.8 v oh high level output voltage 2.0 v i (*) = v il i o =-50 m a 1.9 2.0 1.9 v 3.0 i o =-50 m a 2.9 3.0 2.9 3.0 i o =-4 ma 2.58 2.48 v ol low level output voltage 2.0 v i (*) = v ih i o =50 m a0.00.10.1 v 3.0 i o =50 m a0.00.10.1 3.0 i o =4 ma 0.36 0.44 i i input leakage current 3.6 v i = 5v or gnd 0.1 1 m a i cc quiescent supply current 3.6 v i = v cc or gnd 2 20 m a (*) all outputs loaded. dynamic switching characteristics symbol parameter test conditions value unit v cc (v) t a = 25 o c -40 to 85 o c min. typ. max. min. max. v olp dynamic low voltage quiet output (note 1, 2) 3.3 c l = 50 pf 0.3 0.5 v v olv -0.5 -0.3 v ihd dynamic high voltage input (note 1, 3) 3.3 2 v ild dynamic low voltage input (note 1, 3) 3.3 0.8 1) worst case package 2) max number of outputs defined as (n). data inputs are driven 0v to 3.3v, (n -1) outputs switching and one output at gnd 3) max number of data inputs (n) switching. (n-1) switching 0v to 3.3v. inputs under test switching: 3.3v to threshold (v ild ), 0v to threshold (v ihd ). f=1mhz 74lvx04 3/8
ac electrical characteristics (input t r = t f =3 ns) symbol parameter test condition value unit v cc (v) c l (pf) t a = 25 o c -40 to 85 o c min. typ. max. min. max. t plh t phl propagation delay time 2.7 15 5.4 10.1 1.0 12.5 ns 2.7 50 7.9 13.6 1.0 16.0 3.3 (*) 15 4.1 6.2 1.0 7.5 3.3 (*) 50 6.6 9.7 1.0 11.0 t oslh t oshl output to output skew time (note 1, 2) 2.7 50 1.5 1.5 ns 3.3 (*) 50 1.5 1.5 1) skew is defined as the absolute value of the difference between the actual propagation delay for any two outputs of the sam e device switching in the same direction, either high or low 2) parameter guaranteed by design (*) voltage range is 3.3v 0.3v capacitive characteristics symbol parameter test conditions value unit v cc (v) t a = 25 o c -40 to 85 o c min. typ. max. min. max. c in input capacitance 3.3 410 10 pf c pd power dissipation capacitance (note 1) 3.3 18 pf 1) c pd is defined as the value of the ics internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operting current can be obtained by the following equation. i cc (opr) = c pd v cc f in + i cc /4 (per gate) 74lvx04 4/8
test circuit c l = 15/50 pf or equivalent (includes jig and probe capacitance) r t = z out of pulse generator (typically 50 w ) waveform: propagation delays (f=1mhz; 50% duty cycle) 74lvx04 5/8
dim. mm inch min. typ. max. min. typ. max. a1.750.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c0.5 0.019 c1 45 (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m0.680.026 s 8 (max.) p013g so-14 mechanical data 74lvx04 6/8
dim. mm inch min. typ. max. min. typ. max. a1.10.433 a1 0.05 0.10 0.15 0.002 0.004 0.006 a2 0.85 0.9 0.95 0.335 0.354 0.374 b 0.19 0.30 0.0075 0.0118 c 0.09 0.20 0.0035 0.0079 d 4.9 5 5.1 0.193 0.197 0.201 e 6.25 6.4 6.5 0.246 0.252 0.256 e1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 bsc 0.0256 bsc k0 o 4 o 8 o 0 o 4 o 8 o l 0.50 0.60 0.70 0.020 0.024 0.028 c e b a2 a e1 d 1 pin 1 identification a1 l k e tssop14 mechanical data 74lvx04 7/8
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